Voltage profile and four-terminal resistance of an interacting quantum wire

被引:12
|
作者
Arrachea, Liliana [1 ,2 ,3 ]
机构
[1] Univ Zaragoza, Dept Fis Mat, E-50009 Zaragoza, Spain
[2] Univ Zaragoza, BIFI, E-50009 Zaragoza, Spain
[3] Univ Buenos Aires, Fac Ciencias Exactas & Nat, Dept Fis, RA-1428 Buenos Aires, DF, Argentina
来源
PHYSICAL REVIEW B | 2008年 / 77卷 / 23期
关键词
D O I
10.1103/PhysRevB.77.233105
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigate the behavior of the four-terminal resistance R(4pt) in a quantum wire described by a Luttinger liquid in two relevant situations: (i) in the presence of a single impurity within the wire and (ii) under the effect of asymmetries introduced by disordered voltage probes. In the first case, interactions leave a signature in a power-law behavior of R(4pt) as a function of the voltage V and the temperature T. In the second case interactions tend to mask the effect of the asymmetries. In both scenarios the occurrence of negative values of R(4pt) is explained in simple terms.
引用
收藏
页数:4
相关论文
共 50 条
  • [1] Four-terminal resistance in a clean interacting quantum wire with invasive contacts
    Aita, H.
    Arrachea, L.
    Naon, C.
    [J]. PHYSICA B-CONDENSED MATTER, 2012, 407 (16) : 3158 - 3160
  • [2] Four-terminal resistance of an interacting quantum wire with weakly invasive contacts
    Aita, Hugo
    Arrachea, Liliana
    Naon, Carlos
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2011, 23 (47)
  • [3] Four-terminal resistance of a ballistic quantum wire
    de Picciotto, R
    Stormer, HL
    Pfeiffer, LN
    Baldwin, KW
    West, KW
    [J]. NATURE, 2001, 411 (6833) : 51 - 54
  • [4] Four-terminal resistance of a ballistic quantum wire
    R. de Picciotto
    H. L. Stormer
    L. N. Pfeiffer
    K. W. Baldwin
    K. W. West
    [J]. Nature, 2001, 411 : 51 - 54
  • [5] Influence of the voltage contacts on the four-terminal quantized Hall resistance in the nonlinear regime
    Jeckelmann, B
    Jeanneret, B
    [J]. IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1997, 46 (02) : 276 - 280
  • [6] Quantum electron conductance of four-terminal junctions
    Lu, Jian-Duo
    Hou, Yang-Lai
    Dai, Hou-Mei
    Hou, Ting-Ping
    [J]. INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2008, 22 (13): : 2100 - 2110
  • [7] Quantum pump effect in a four-terminal mesoscopic structure
    王凯凯
    [J]. Journal of Semiconductors, 2015, 36 (02) - 13
  • [8] Quasi-Balance Four-Terminal Resistance Bridge
    Lai, Lei
    Feng, Jian
    Shi, Leibing
    [J]. IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 2015, 64 (06) : 1636 - 1641
  • [9] Transport through a four-terminal quantum dot arrays
    He, Zelong
    Lu, Tianquan
    Li, Hua
    Yin, Haitao
    [J]. PHYSICS LETTERS A, 2006, 360 (01) : 199 - 204
  • [10] Quantum pump effect in a four-terminal mesoscopic structure
    Wang Kaikai
    [J]. JOURNAL OF SEMICONDUCTORS, 2015, 36 (02)