Ferromagnetic semiconductor spintronics

被引：0
|
作者：
Ohno, H [1 ]
机构：
[1] Tohoku Univ, Res Inst Elect Commun, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
PHYSICS OF SEMICONDUCTORS 2002, PROCEEDINGS | 2003年 / 171卷
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Ferromagnetism in magnetic III-V semiconductors that can be integrated epitaxially into nonmagnetic heterostructures allows us to explore spin-dependent phenomena previously not accessible in semiconductors. Here, I review the properties of ferromagnetic III-V's and their heterostructures. Prospect of a new class of semiconductor electronics that utilizes both the charge and spin degrees of freedom (semiconductor spintronics) is also discussed.
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页码：37 / 45
页数：9
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