Ferromagnetic semiconductors for spintronics

被引：9
|
作者：
Ohno, H [1 ]
机构：
[1] Tohoku Univ, Res Inst Elect Commun, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
PHYSICA B-CONDENSED MATTER | 2006年 / 376卷
关键词：
III-V semiconductors; ferromagnetism; spintronics; transition metal doping;
D O I：
10.1016/j.physb.2005.12.007
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
An overview is given for the current understanding of the ferromagnetism in manganese-doped III-V compounds together with the description on prototype device structures that allow us to explore a number of new possibilities in spintronics. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：19 / 21
页数：3
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