The kinetics of semiconductor photocatalysis: Light intensity effects

被引:30
|
作者
Mills, A [1 ]
Wang, JS [1 ]
机构
[1] Univ Wales, Dept Chem, Swansea SA2 8PP, W Glam, Wales
关键词
semiconductor; photocatalysis; light intensity;
D O I
10.1524/zpch.1999.213.Part_1.049
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The kinetics of the photomineralisation of 4-chlorophenol, 4-CP, by oxygen, sensitized by TiO2 as a function of incident light intensity are described. Degussa P25 TiO2 in the form of either a thin film or a dispersion is used as the photocatalyst. With a TiO2 dispersion the initial rate of photomineralisation, R-i, depends upon I-0.64, implying that electron-hole recombination is the dominant process with respect to photogenerated holes (where R-i is expected proportional to I-0.5), but that the light intensities used spanned both the high (R-i expected proportional to I-0.5) and low (R-i expected proportional to I) intensity regimes. With a TiO2 film R-i is proportional to I indicating that the photocatalytically active particles of the TiO2 film are shielded in some way and so operate under low intensity conditions. Most significantly, it was also found that the apparent value of the Langmuir adsorption coefficient, K4-CP, as determined from the kinetic data, was not independent of I for either a TiO2, film or dispersion photocatalyst. Rather K4-CP increased with decreasing light intensity. A possible mechanism is suggested as a rationale for the observed light intensity effects reported.
引用
收藏
页码:49 / 58
页数:10
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