Dynamics of photo-excited carriers on GaAs(100) surface studied by ultrafast time-resolved photoemission

被引：8
|
作者：
Azuma, Junpei [1 ]
Tokudomi, Shinji [1 ]
Takahashi, Kazutoshi [1 ]
Kamada, Masao [1 ]
机构：
[1] Saga Univ, Synchrotron Light Applicat Ctr, Saga 8408502, Japan
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 1 | 2009年 / 6卷 / 01期
关键词：
PHOTOVOLTAGE; SYNCHROTRON; COMBINATION;
D O I：
10.1002/pssc.200879809
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Dynamics of the photo-excited carriers on the GaAs(100) surface have been studied by measuring the surface photo-voltage effect (SPV) with the Ultrafast time-resolved photo-emission spectroscopy. The fast SPV decay with a few pico-second lifetime has been observed on the n-type GaAs(100) surface. The lifetime of the fast decay component was almost independent with dopant levels, pump powers, and sample temperatures which mainly change the surface potential barrier in the band bending region. This result supports the SPV relaxation model of the hot electron because the time scale of the electron thermalization is considered to be less affected by the change of the surface potential barrier. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：307 / 310
页数：4
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