Resistive switching memories in MoS2 nanosphere assemblies

被引：73

作者：

Xu, Xiao-Yong ^{[1
,2
,3
,4
]}

Yin, Zong-You ^{[4
]}

Xu, Chun-Xiang ^{[2
,3
]}

Dai, Jun ^{[2
,3
]}

Hu, Jing-Guo ^{[1
]}

机构：

[1] Yangzhou Univ, Sch Phys Sci & Technol, Yangzhou 225002, Peoples R China

[2] Southeast Univ, State Key Lab Bioelect, Nanjing 210096, Jiangsu, Peoples R China

[3] Southeast Univ, Sch Elect Sci & Engn, Nanjing 210096, Jiangsu, Peoples R China

[4] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 03期

基金：

中国国家自然科学基金;

关键词：

SINGLE-LAYER MOS2; GRAPHENE OXIDE; MOLYBDENUM-DISULFIDE; HETEROSTRUCTURES; DEVICES; PHOTOTRANSISTORS; NANOPARTICLES; TRANSISTORS; RESISTANCE; MEMRISTOR;

D O I：

10.1063/1.4862755

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A resistive switching memory device consisting of reduced graphene oxide and indium tin oxide as top/bottom two electrodes, separated by dielectric MoS2 nanosphere assemblies as the active interlayer, was fabricated. This device exhibits the rewritable nonvolatile resistive switching with low SET/RESET voltage (similar to 2 V), high ON/OFF resistance ratio (similar to 10(4)), and superior electrical bistability, introducing a potential application in data storage field. The resistance switching mechanism was analyzed in the assumptive model of the electron tunneling across the polarized potential barriers. (C) 2014 AIP Publishing LLC.

引用

页数：5

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