Quantum cascade laser utilising aluminium-free material system: InGaAs/GaAsSb lattice-matched to InP

被引：26
|
作者：
Nobile, M. [1 ,2 ]
Klang, P. [1 ,2 ]
Mujagic, E. [1 ,2 ]
Detz, H. [1 ,2 ]
Andrews, A. M. [1 ,2 ]
Schrenk, W. [1 ,2 ]
Strasser, G. [1 ,2 ]
机构：
[1] Vienna Univ Technol, Ctr Micro & Nanostruct, A-1040 Vienna, Austria
[2] Vienna Univ Technol, Inst Solid State Elect, A-1040 Vienna, Austria
来源：
ELECTRONICS LETTERS | 2009年 / 45卷 / 20期
基金：
奥地利科学基金会;
关键词：
MU-M; PERFORMANCE; OPERATION; ALLOYS;
D O I：
10.1049/el.2009.1995
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The demonstration of an aluminium-free quantum cascade laser is reported. The presented quantum cascade laser has been realised in an InGaAs/GaAsSb material system lattice-matched to InP. Laser emission is observed at a wavelength around 11.3 mu m. The threshold current density is 1.7 kA/cm(2) at 78 K, and a maximum optical output power of 20 mW at the same temperature is reported.
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页码：1031 / 1032
页数：2
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