Grain Boundary Phenomena in an Ultrafine-Grained Al-Zn Alloy with Improved Mechanical Behavior for Micro-Devices

被引:89
|
作者
Chinh, Nguyen Q. [1 ]
Valiev, Ruslan Z. [2 ,3 ]
Sauvage, Xavier [4 ]
Varga, Gabor [1 ]
Havancsak, Karoly [1 ]
Kawasaki, Megumi [5 ,6 ,7 ]
Straumal, Boris B. [8 ,9 ,10 ]
Langdon, Terence G. [6 ,7 ,10 ]
机构
[1] Eotvos Lorand Univ, Dept Mat Phys, H-1117 Budapest, Hungary
[2] Ufa State Aviat Tech Univ, Inst Phys Adv Mat, Ufa 450000, Russia
[3] St Petersburg State Univ, Lab Mech Bulk Nanostruct Mat, St Petersburg 198504, Russia
[4] Univ Rouen, Grp Phys Mat, UMR CNRS 6634, F-76801 St Etienne, France
[5] Hanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea
[6] Univ So Calif, Dept Aerosp & Mech Engn, Los Angeles, CA 90089 USA
[7] Univ So Calif, Dept Mat Sci, Los Angeles, CA 90089 USA
[8] State Univ, Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Russia
[9] Natl Univ Sci & Technol MISIS, Lab Hybrid Nanostruct Mat, Moscow 119049, Russia
[10] Univ Southampton, Mat Res Grp, Fac Engn & Environm, Southampton SO17 1BJ, Hants, England
基金
匈牙利科学研究基金会; 俄罗斯基础研究基金会; 欧洲研究理事会;
关键词
SEVERE PLASTIC-DEFORMATION; HIGH-PRESSURE TORSION; SOLID-SOLUTION; PHASE-TRANSFORMATIONS; ROOM-TEMPERATURE; FLOW PROCESSES; MG ALLOYS; ALUMINUM; METALS; SCALE;
D O I
10.1002/adem.201300450
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The microstructural and mechanical properties of an ultrafine-grained (UFG) Al-Zn alloy processed by high-pressure torsion (HPT) are investigated using depth-sensing indentations, focused ion beam, scanning electron microscopy and scanning transmission electron microscopy. Emphasis is placed on the microstructure and the effects of grain boundaries at room temperature. The experiments show the formation of Zn-rich layers at the Al/Al grain boundaries that enhance the role of grain boundary sliding leading to unique plastic behavior in this UFG material. The occurrence of significant grain boundary sliding at room temperature is demonstrated by deforming micro-pillars. Our results illustrate a potential for using UFG materials as advanced functional materials in electronic micro-devices.
引用
收藏
页码:1000 / 1009
页数:10
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