Lowering of Tc in Van Der Waals Layered Materials Under In-Plane Strain

被引:4
|
作者
Neumayer, Sabine M. [1 ]
Susner, Michael A. [2 ]
McGuire, Michael A. [3 ]
Pantelides, Sokrates T. [4 ,5 ]
Kalnaus, Sergiy [6 ]
Maksymovych, Petro [1 ]
Balke, Nina [1 ]
机构
[1] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
[2] Air Force Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA
[3] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA
[4] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA
[5] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA
[6] Oak Ridge Natl Lab, Computat Sci & Engn Div, Oak Ridge, TN 37831 USA
关键词
Strain; Voltage measurement; Spectroscopy; Area measurement; Temperature; Piezoelectric polarization; Force; Ferroelectric; piezoelectric; strain engineering; van der Waals material;
D O I
10.1109/TUFFC.2020.3007290
中图分类号
O42 [声学];
学科分类号
070206 ; 082403 ;
摘要
The dependence of electromechanical behavior on strain in ferroelectric materials can be leveraged as parameter to tune ferroelectric properties such as the Curie temperature. For van der Waals materials, a unique opportunity arises because of wrinkling, bubbling, and Moire phenomena accessible due to structural properties inherent to the van der Waals gap. Here, we use piezoresponse force microscopy and unsupervised machine learning methods to gain insight into the ferroelectric properties of layered CuInP2S6 where local areas are strained in-plane due to a partial delamination, resulting in a topographic bubble feature. We observe significant differences between strained and unstrained areas in piezoresponse images as well as voltage spectroscopy, during which strained areas show a sigmoid-shaped response usually associated with the response measured around the Curie temperature, indicating a lowering of the Curie temperature under tensile strain. These results suggest that strain engineering might be used to further increase the functionality of CuInP2S6 through locally modifying ferroelectric properties on the micro- and nanoscale.
引用
收藏
页码:253 / 258
页数:6
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