Thermoelectric Properties for a Suspended Microribbon of Quasi-One-Dimensional TiS3

被引:10
|
作者
Sakuma, Tasuku [1 ]
Nishino, Shunsuke [1 ]
Miyata, Masanobu [1 ]
Koyano, Mikio [1 ]
机构
[1] Japan Adv Inst Sci & Technol, 1-1 Asahidai, Nomi, Ishikawa 9231292, Japan
关键词
Transition-metal trichalcogenide; TiS3; quasi-one-dimensional conductor; anisotropy of thermoelectric properties; DFT calculation; THERMAL-CONDUCTIVITY MEASUREMENT; 3-OMEGA METHOD;
D O I
10.1007/s11664-018-6086-z
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Transition-metal trichalcogenides MX3 (M = Ti, Zr, Nb, Ta; X = S, Se) are well-known inorganic quasi-one-dimensional conductors. Among them, we have investigated the thermoelectric properties of titanium trisulfide TiS3 microribbon. The electrical resistivity rho, thermal conductivity kappa, and thermoelectric power S were measured using 3 omega method. The weight mean values were found to be rho = 5 m omega m and kappa = 10 W K-1 m(-1) along the one-dimensional direction (b-axis) of the TiS3 microribbon. Combined with the thermoelectric power S = -530 mu V K-1, the figure of merit was calculated as ZT = 0.0023. This efficiency is the same as that of randomly oriented bulk TiS3. We also estimated the anisotropy of sigma and kappa using the present results and those for randomly oriented bulk material. The obtained weak anisotropy for TiS3 is attributable to strong coupling between triangular columns consisting of TiS3 units. These experimental results are consistent with theoretical results obtained using density functional theory (DFT) calculations.
引用
收藏
页码:3177 / 3183
页数:7
相关论文
共 50 条
  • [21] Quasi-one-dimensional van der Waals TiS3 nanosheets for energy storage applications: Theoretical predications and experimental validation
    Patra, Abhinandan
    Kapse, Samadhan
    Thapa, Ranjit
    Late, Dattatray J.
    Rout, Chandra Sekhar
    APPLIED PHYSICS LETTERS, 2022, 120 (10)
  • [22] Thermoelectric properties improvement in quasi-one-dimensional organic crystals
    Sanduleac, Ionel
    Pflaum, Jens
    Casian, Anatolie
    JOURNAL OF APPLIED PHYSICS, 2019, 126 (17)
  • [23] Modeling of the thermoelectric properties of quasi-one-dimensional organic semiconductors
    Casian, A
    Balandin, AA
    Dusciac, V
    Dusciac, R
    XXI INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT '02, 2002, : 310 - 313
  • [24] XPS STUDY OF ONE-DIMENSIONAL COMPOUNDS - TIS3
    ENDO, K
    IHARA, H
    WATANABE, K
    GONDA, SI
    JOURNAL OF SOLID STATE CHEMISTRY, 1982, 44 (02) : 268 - 272
  • [25] The electronic band structure of quasi-one-dimensional van der Waals semiconductors: the effective hole mass of ZrS3 compared to TiS3
    Yi, Hemian
    Gilbert, Simeon J.
    Lipatov, Alexey
    Sinitskii, Alexander
    Avila, Jose
    Abourahma, Jehad
    Komesu, Takashi
    Asensio, Maria C.
    Dowben, Peter A.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2020, 32 (29)
  • [26] Strong Metal-Sulfur Hybridization in the Conduction Band of the Quasi-One-Dimensional Transition-Metal Trichalcogenides: TiS3 and ZrS3
    Gilbert, Simeon J.
    Yi, Hemian
    Paudel, Tula
    Lipatov, Alexey
    Yost, Andrew J.
    Sinitskii, Alexander
    Tsymbal, Evgeny Y.
    Avila, Jose
    Asensio, Maria C.
    Dowben, Peter A.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2022, 126 (41): : 17647 - 17655
  • [27] ZrSe3-Type Variant of TiS3: Structure and Thermoelectric Properties
    Guilmeau, Emmanuel
    Berthebaud, David
    Misse, Patrick R. N.
    Hebert, Sylvie
    Lebedev, Oleg I.
    Chateigner, Daniel
    Martin, Christine
    Maignan, Antoine
    CHEMISTRY OF MATERIALS, 2014, 26 (19) : 5585 - 5591
  • [28] TiS2 and TiS3 layered materials: Intercalation and/or substitution to enhance the thermoelectric properties
    Maignan, Antoine
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2015, 250
  • [29] Conductance anisotropy and the power-law current-voltage characteristics along and across the layers of the TiS3 quasi-one-dimensional layered semiconductor
    I. G. Gorlova
    S. G. Zybtsev
    V. Ya. Pokrovskii
    JETP Letters, 2014, 100 : 256 - 261
  • [30] Conductance anisotropy and the power-law current-voltage characteristics along and across the layers of the TiS3 quasi-one-dimensional layered semiconductor
    Gorlova, I. G.
    Zybtsev, S. G.
    Pokrovskii, V. Ya
    JETP LETTERS, 2014, 100 (04) : 256 - 261