Etch and CMP process control using in-line AFM

被引：0

作者：

Trenkler, T ^{[1
]}

Kraiss, T

Mantz, U

Weidner, P

Pinto, RH

机构：

[1] Infineon Technol, Dresden, Germany

[2] KLA Tencor, San Jose, CA USA

来源：

SOLID STATE TECHNOLOGY | 2004年 / 47卷 / 07期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As aspect ratios become higher, features become smaller, and requirements for planarity tighten, atomic force microscopy has begun to replace profilometry for topographic measurements such as trench and via depths, step height, and micro-planarity measurements, both in development and in production. The application of a high-throughput AFM for line monitoring in the STI and trench capacitor modules is described.

引用

页码：101 / +

页数：5

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