The role of deep levels in the persistent photoconductivity in Mg-doped GaN grown by MOCVD

被引：3
|
作者：
Seghier, D [1 ]
Gislason, HP [1 ]
机构：
[1] Univ Iceland, Inst Sci, IS-107 Reykjavik, Iceland
来源：
PHYSICA B-CONDENSED MATTER | 1999年 / 273-4卷
关键词：
GaN : Mg; PPC; deep defects; photocapacitance;
D O I：
10.1016/S0921-4526(99)00407-X
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Electrical properties of Mg doped GaN epilayers grown by metalorganic chemical vapor deposition were investigated using photocapacitance measurements. Annealing at different temperatures gave gradual activation of Mg-acceptors in samples taken from the same as-grown wafer. The samples exhibit a clear persistent photocapacitance at low temperatures. Measurements of the photocapacitance as a function of excitation energy show the presence of energy levels at 1.1 and 1.9 eV from the valence band. The concentration of both traps increases with the temperature and duration of the annealing. We show that the traps are metastable and conclude that they are related to the Mg doping. Our results support the hypothesis that the PPC observed in GaN:Mg originates from these metastable deep Mg-related centers. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：63 / 65
页数：3
相关论文
共 50 条
  • [41] Improved Mg-doped GaN films grown over a multilayered buffer
    Zhang, X
    Chua, SJ
    Li, P
    Chong, KB
    Wang, W
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (13) : 1772 - 1774
  • [42] Current deep-level transient spectroscopy investigation of acceptor levels in Mg-doped GaN
    Nakano, Y
    Kachi, T
    [J]. APPLIED PHYSICS LETTERS, 2001, 79 (11) : 1631 - 1633
  • [43] Characteristics of Mg-doped GaN grown by metallorganic chemical vapor deposition
    Eiting, CJ
    Grudowski, PA
    Park, J
    Lambert, DJH
    Shelton, BS
    Dupuis, RD
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (08) : L219 - L221
  • [44] Characterization of Mg-doped GaN grown by metalorganic chemical vapor deposition
    Lachab, M
    Youn, DH
    Fareed, RSQ
    Wang, T
    Sakai, S
    [J]. SOLID-STATE ELECTRONICS, 2000, 44 (09) : 1669 - 1677
  • [45] High Temperature Annealing of MBE-grown Mg-doped GaN
    Contreras, S.
    Konczewicz, L.
    Peyre, H.
    Juillaguet, S.
    Al Khalfioui, M.
    Matta, S.
    Leroux, M.
    Damilano, B.
    Brault, J.
    [J]. 33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, 864
  • [46] Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition
    Qu, BZ
    Zhu, QS
    Sun, XH
    Wan, SK
    Wang, ZG
    Nagai, H
    Kawaguchi, Y
    Hiramatsu, K
    Sawaki, N
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2003, 21 (04): : 838 - 841
  • [47] The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate
    Narita, Tetsuo
    Tokuda, Yutaka
    Kogiso, Tatsuya
    Tomita, Kazuyoshi
    Kachi, Tetsu
    [J]. JOURNAL OF APPLIED PHYSICS, 2018, 123 (16)
  • [48] Detailed deep trap analysis in Mg-doped p-type GaN layers grown by MOVPE
    Witte, H
    Krtschil, A
    Lisker, M
    Krost, A
    Christen, J
    Kuhn, B
    Scholz, F
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 82 (1-3): : 85 - 87
  • [49] LUMINESCENCE OF BE-DOPED AND MG-DOPED GAN
    ILEGEMS, M
    DINGLE, R
    [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4234 - 4235
  • [50] The role of vacancies in the red luminescence from Mg-doped GaN
    Zeng, S.
    Aliev, G. N.
    Wolverson, D.
    Davies, J. J.
    Bingham, S. J.
    Abdulmalik, D. A.
    Coleman, P. G.
    Wang, T.
    Parbrook, P. J.
    [J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06): : 1919 - 1922
12345