High frequency Coplanar Microwave Resonator using ferroelectric thin film for Wireless Communication Applications

被引：2

作者：

Gupta, Reema ^{[1
]}

Rana, Lokesh ^{[1
]}

Sharma, Anjali ^{[4
]}

Freundorfer, A. P. ^{[3
]}

Sayer, Michael ^{[3
]}

Tomar, Monika ^{[2
]}

Gupta, Vinay ^{[1
]}

机构：

[1] Univ Delhi, Dept Phys & Astrophys, Delhi, India

[2] Univ Delhi, Phys Dept, Miranda House, Delhi, India

[3] Queens Univ, Dept Phys, Kingston, ON, Canada

[4] Univ Delhi, Phys Dept, Atma Ram Sanatan Dharma Coll, Delhi, India

来源：

MATERIALS TODAY-PROCEEDINGS | 2018年 / 5卷 / 07期

关键词：

PZT; Microwave; Resonator;

D O I：

10.1016/j.matpr.2018.05.023

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the present work, the electrical properties of Lead Zirconium Titanate (PZT) thin film have been investigated for the realization of microwave resonators. The PZT thin film deposited using pulsed laser deposition technique (PLD) has been exploited as dielectric layer for the tunable resonators for the widespread applications in the field of communication. The polycrystalline thin film of PZT shows good dielectric and tunable properties. The dielectric constant and dielectric loss of the PZT thin film deposited at 800 degrees C substrate temperature were found to be 390 and 0.08. A microwave resonator has been fabricated using the optimized PZT thin film at a resonating frequency of 12.02 GHz which is in microwave range. (c) 2018 Elsevier Ltd. All rights reserved.

引用

页码：15395 / 15398

页数：4

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