High-power III-nitride emitters for solid-state lighting

被引：0

作者：

Krames, MR ^{[1
]}

Collins, JBD ^{[1
]}

Gardner, NF ^{[1
]}

Gotz, W ^{[1
]}

Lowery, CH ^{[1
]}

Ludowise, M ^{[1
]}

Martin, PS ^{[1
]}

Mueller, G ^{[1
]}

Mueller-Mach, R ^{[1
]}

Rudaz, S ^{[1
]}

Steigerwald, DA ^{[1
]}

Stockman, SA ^{[1
]}

Wierer, JJ ^{[1
]}

机构：

[1] Lumileds Lighting, San Jose, CA 95131 USA

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2002年 / 192卷 / 02期

关键词：

D O I：

10.1002/1521-396X(200208)192:2<237::AID-PSSA237>3.0.CO;2-I

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-power, large-area InGaN/GaN quantum-well heterostructure light-emitting diodes based on an inverted, or "flip-chip", configuration are described. These devices are mounted in specially designed high-power (approximate to1-5 W) packages and exhibit high extraction efficiency and low operating voltage. In the blue wavelength regime, output powers greater than 250 mW (1 x 1 mm(2) device) and 1 W (2 x 2 mm(2) device) are delivered at standard operating current densities (approximate to50 A/cm(2)), corresponding to "wall-plug" efficiencies of 22%-23%. Employing phosphors for the generation of white light, these same devices achieve luminous efficiencies greater than 30 lm/W.

引用

页码：237 / 245

页数：9

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