Threshold for potential sputtering of LiF

被引:46
|
作者
Hayderer, G
Schmid, M
Varga, P
Winter, HP
Aumayr, F
Wirtz, L
Lemell, C
Burgdörfer, J
Hägg, L
Reinhold, CO
机构
[1] Vienna Tech Univ, Inst Allgemeine Phys, A-1040 Vienna, Austria
[2] Vienna Tech Univ, Inst Theoret Phys, A-1040 Vienna, Austria
[3] Mid Sweden Univ, Dept Math & Phys, S-85170 Sundsvall, Sweden
关键词
D O I
10.1103/PhysRevLett.83.3948
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have measured total sputtering yields for impact of slow (less than or equal to 100 eV) singly and doubly charged ions on LiF. The minimum potential energy necessary to induce potential sputtering (PS) from UF was determined to be about 10 eV. This threshold coincides with the energy necessary to produce a cold hole in the valence band of LiF by resonant neutralization. This allows the first unambiguous identification of PS induced by cold holes. Further stepwise increase of the sputtering yield with higher projectile potential energies provides evidence for additional defect-mediated sputtering mechanisms operative in alkali halides.
引用
收藏
页码:3948 / 3951
页数:4
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