Selective decoration of nanocrystals on single-crystalline PtTe nanowires based on a solid-state reaction

被引:1
|
作者
Kim, Byeong Geun [1 ]
Lee, Jin-Hyung [2 ]
Choi, Soon-Mok [1 ]
机构
[1] Korea Univ Technol & Educ, Sch Energy Mat & Chem Engn, Cheonan 330708, South Korea
[2] Korea Inst Sci & Technol, Ctr BioMicrosyst, Seoul 136791, South Korea
来源
RSC ADVANCES | 2015年 / 5卷 / 98期
基金
新加坡国家研究基金会;
关键词
SILVER NANOPARTICLES; THERMOELECTRIC PROPERTIES; SILICON NANOWIRES; PBTE NANOWIRES; HETEROSTRUCTURES; SURFACE; FABRICATION; NANOTUBES; BI2TE3; SB2TE3;
D O I
10.1039/c5ra13933c
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In this study, we demonstrate the fabrication of single-crystalline PtTe nanowires with/without decoration of nanocrystals from different heterostructure nanowires. Sb2Te3/Pt and Te/Pt core/shell nanowires were prepared by Pt deposition on single-crystalline Sb2Te3 and Te nanowires, respectively, using a sputtering process. When Sb2Te3/Pt core/shell nanowires were annealed at 600 degrees C, Sb nanocrystal-decorated PtTe nanowires were fabricated by a solid-state reaction between the core Sb2Te3 nanowires and the Pt shell layers. PtTe nanowires without decoration of nanocrystals were produced by annealing Te/Pt core/shell nanowires at a temperature of 600 degrees C. Based on the experimental results, the comprehensive mechanism for the formation of PtTe nanowires with/without decoration of nanocrystals is discussed herein. We believe that this facile method, based on solid-state reactions, can be exploited to develop low-dimensional Te-based dichalcogenides to improve functionality in a variety of fields such as energy conversion, energy transition, superconductors and topological insulators.
引用
收藏
页码:80766 / 80771
页数:6
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