In situ repair of optoelectronic devices with femtosecond laser pulses

被引：11

作者：

Dupont, E ^{[1
]}

Zhu, X

Chiu, S

Moisa, S

Buchanan, M

Gao, M

Liu, HC

Corkum, PB

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[2] Natl Res Council Canada, Steacie Inst Mol Sci, Ottawa, ON K1A 0R6, Canada

[3] Def Res Estab, Dept Natl Def, Ottawa, ON K1A 0Z4, Canada

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2000年 / 15卷 / 03期

关键词：

Crystal defects - Crystallography - Laser ablation - Laser pulses - Light emitting diodes;

D O I：

10.1088/0268-1242/15/3/102

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter demonstrates an application of femtosecond laser ablation to eliminate the effect of crystallographic defects on optoelectronic devices. These defects can electrically shunt the devices and, in some applications, it is of great importance to circumvent the limitations due to these defects. On a large-area light-emitting diode, we show that laser ablation is an ideal treatment technique to eliminate the effect of defects. We found that laser surgery on light-emitting diodes is an easy technique to implement. It allows an in situ repair of defective areas.

引用

页码：L15 / L18

页数：4

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