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Analysis of Polarization-Independent Nonlinear Cross-Slot Waveguide with Fourier Modal Method (FMM)
被引:0
|作者:
Paul, Somnath
[1
]
Tervo, Jani
[1
]
Honkanen, Seppo
[1
]
机构:
[1] Univ Eastern Finland, Inst Photon, FI-80101 Joensuu, Finland
来源:
关键词:
FMM;
Fourier factorization rules;
Eigenvalue;
Eigenmode;
CMOS;
SOI;
Effectiveindex;
Polarization;
Effective area;
Confinement factor;
Nonlinear waveguide parameter;
AMORPHOUS-SILICON;
CHIP;
LIGHT;
FORMULATION;
PHOTONICS;
GRATINGS;
GAIN;
D O I:
10.1117/12.2048994
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
We propose the Fourier Modal Method (FMM) as a convenient numerical tool for the design and analysis of nonlinear optical waveguides. The scope of this work includes the design of a polarization-independent nonlinear cross-slot waveguide for telecommunication applications at the wavelength of 1550 nm. The FMM method has been implemented, obeying the proper Fourier factorization rules, within a MATLAB (TM) environment. The influence of the modal field intensity on the transverse refractive index distribution due to the optical Kerr effect is modeled with FMM for a propagation invariant scheme of the waveguide. The waveguide is geometrically optimized for an enhanced nonlinear light matter interaction. A silicon-inorganic hybrid material platform based on hydrogenated amorphous silicon (a-Si:H) and amorphous titanium dioxide (TiO2) is considered for the mentioned waveguide. With the optimized design of the waveguide, the achieved value of the nonlinear waveguide parameter (gamma) is 4.678 x 10(4) W-1 Km(-1).
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页数:10
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