Analysis of Polarization-Independent Nonlinear Cross-Slot Waveguide with Fourier Modal Method (FMM)

被引:0
|
作者
Paul, Somnath [1 ]
Tervo, Jani [1 ]
Honkanen, Seppo [1 ]
机构
[1] Univ Eastern Finland, Inst Photon, FI-80101 Joensuu, Finland
关键词
FMM; Fourier factorization rules; Eigenvalue; Eigenmode; CMOS; SOI; Effectiveindex; Polarization; Effective area; Confinement factor; Nonlinear waveguide parameter; AMORPHOUS-SILICON; CHIP; LIGHT; FORMULATION; PHOTONICS; GRATINGS; GAIN;
D O I
10.1117/12.2048994
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We propose the Fourier Modal Method (FMM) as a convenient numerical tool for the design and analysis of nonlinear optical waveguides. The scope of this work includes the design of a polarization-independent nonlinear cross-slot waveguide for telecommunication applications at the wavelength of 1550 nm. The FMM method has been implemented, obeying the proper Fourier factorization rules, within a MATLAB (TM) environment. The influence of the modal field intensity on the transverse refractive index distribution due to the optical Kerr effect is modeled with FMM for a propagation invariant scheme of the waveguide. The waveguide is geometrically optimized for an enhanced nonlinear light matter interaction. A silicon-inorganic hybrid material platform based on hydrogenated amorphous silicon (a-Si:H) and amorphous titanium dioxide (TiO2) is considered for the mentioned waveguide. With the optimized design of the waveguide, the achieved value of the nonlinear waveguide parameter (gamma) is 4.678 x 10(4) W-1 Km(-1).
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页数:10
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