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- [31] Evolution of the d|| band across the metal-insulator transition in VO2SOLID STATE COMMUNICATIONS, 2005, 135 (03) : 189 - 192Mossanek, RJO论文数: 0 引用数: 0 h-index: 0机构: Univ Fed Parana, Dept Fis, BR-81531990 Curitiba, Parana, Brazil Univ Fed Parana, Dept Fis, BR-81531990 Curitiba, Parana, BrazilAbbate, M论文数: 0 引用数: 0 h-index: 0机构: Univ Fed Parana, Dept Fis, BR-81531990 Curitiba, Parana, Brazil Univ Fed Parana, Dept Fis, BR-81531990 Curitiba, Parana, Brazil
- [32] Research progress of metal-insulator phase transition mechanism in VO2ACTA PHYSICA SINICA, 2016, 65 (04)Luo Ming-Hai论文数: 0 引用数: 0 h-index: 0机构: Hubei Univ, Fac Mat Sci & Engn, Hubei Collaborat Innovat Ctr Adv Organ Chem Mat, Key Lab Green Preparat & Applicat Funct Mat,Minis, Wuhan 430062, Peoples R China Hubei Univ, Fac Mat Sci & Engn, Hubei Collaborat Innovat Ctr Adv Organ Chem Mat, Key Lab Green Preparat & Applicat Funct Mat,Minis, Wuhan 430062, Peoples R ChinaXu Ma-Ji论文数: 0 引用数: 0 h-index: 0机构: Hubei Univ, Fac Mat Sci & Engn, Hubei Collaborat Innovat Ctr Adv Organ Chem Mat, Key Lab Green Preparat & Applicat Funct Mat,Minis, Wuhan 430062, Peoples R China Hubei Univ, Fac Mat Sci & Engn, Hubei Collaborat Innovat Ctr Adv Organ Chem Mat, Key Lab Green Preparat & Applicat Funct Mat,Minis, Wuhan 430062, Peoples R ChinaHuang Qi-Wei论文数: 0 引用数: 0 h-index: 0机构: Hubei Univ, Fac Mat Sci & Engn, Hubei Collaborat Innovat Ctr Adv Organ Chem Mat, Key Lab Green Preparat & Applicat Funct Mat,Minis, Wuhan 430062, Peoples R China Hubei Univ, Fac Mat Sci & Engn, Hubei Collaborat Innovat Ctr Adv Organ Chem Mat, Key Lab Green Preparat & Applicat Funct Mat,Minis, Wuhan 430062, Peoples R ChinaLi Pai论文数: 0 引用数: 0 h-index: 0机构: Hubei Univ, Fac Mat Sci & Engn, Hubei Collaborat Innovat Ctr Adv Organ Chem Mat, Key Lab Green Preparat & Applicat Funct Mat,Minis, Wuhan 430062, Peoples R China Hubei Univ, Fac Mat Sci & Engn, Hubei Collaborat Innovat Ctr Adv Organ Chem Mat, Key Lab Green Preparat & Applicat Funct Mat,Minis, Wuhan 430062, Peoples R ChinaHe Yun-Bin论文数: 0 引用数: 0 h-index: 0机构: Hubei Univ, Fac Mat Sci & Engn, Hubei Collaborat Innovat Ctr Adv Organ Chem Mat, Key Lab Green Preparat & Applicat Funct Mat,Minis, Wuhan 430062, Peoples R China Hubei Univ, Fac Mat Sci & Engn, Hubei Collaborat Innovat Ctr Adv Organ Chem Mat, Key Lab Green Preparat & Applicat Funct Mat,Minis, Wuhan 430062, Peoples R China
- [33] Mesoscopic Metal-Insulator Transition at Ferroelastic Domain Walls in VO2ACS NANO, 2010, 4 (08) : 4412 - 4419Tselev, Alexander论文数: 0 引用数: 0 h-index: 0机构: Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA Oak Ridge Natl Lab, Oak Ridge, TN 37831 USAMeunier, Vincent论文数: 0 引用数: 0 h-index: 0机构: Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA Oak Ridge Natl Lab, Oak Ridge, TN 37831 USAStrelcov, Evgheni论文数: 0 引用数: 0 h-index: 0机构: So Illinois Univ, Dept Phys, Carbondale, IL 62901 USA Oak Ridge Natl Lab, Oak Ridge, TN 37831 USAShelton, William A., Jr.论文数: 0 引用数: 0 h-index: 0机构: Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA Oak Ridge Natl Lab, Oak Ridge, TN 37831 USALuk'yanchuk, Igor A.论文数: 0 引用数: 0 h-index: 0机构: Univ Picardie Jules Verne, F-80039 Amiens, France LD Landau Theoret Phys Inst, Moscow, Russia Oak Ridge Natl Lab, Oak Ridge, TN 37831 USAJones, Keith论文数: 0 引用数: 0 h-index: 0机构: Asylum Res, Santa Barbara, CA 93117 USA Oak Ridge Natl Lab, Oak Ridge, TN 37831 USAProksch, Roger论文数: 0 引用数: 0 h-index: 0机构: Asylum Res, Santa Barbara, CA 93117 USA Oak Ridge Natl Lab, Oak Ridge, TN 37831 USAKolmakov, Andrei论文数: 0 引用数: 0 h-index: 0机构: So Illinois Univ, Dept Phys, Carbondale, IL 62901 USA Oak Ridge Natl Lab, Oak Ridge, TN 37831 USAKalinin, Sergei V.论文数: 0 引用数: 0 h-index: 0机构: Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA
- [34] Fracture toughness of VO2 microcrystals across metal-insulator transitionMATERIALS LETTERS, 2022, 315Verma, Divya论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol Mandi, Sch Engn, Mandi 175075, Himachal Prades, India Indian Inst Technol Mandi, Sch Engn, Mandi 175075, Himachal Prades, IndiaSingh, Davinder论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol Mandi, Sch Engn, Mandi 175075, Himachal Prades, India Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland Indian Inst Technol Mandi, Sch Engn, Mandi 175075, Himachal Prades, IndiaBalakrishnan, Viswanath论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol Mandi, Sch Engn, Mandi 175075, Himachal Prades, India Indian Inst Technol Mandi, Sch Engn, Mandi 175075, Himachal Prades, India
- [35] Thermal Conductivity of VO2 Nanowires at Metal-Insulator Transition TemperatureNANOMATERIALS, 2021, 11 (09)Li, Da论文数: 0 引用数: 0 h-index: 0机构: Tongji Univ, Sch Phys Sci & Engn, China EU Joint Ctr Nanophonon, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R China Tongji Univ, Sch Phys Sci & Engn, China EU Joint Ctr Nanophonon, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R ChinaWang, Qilang论文数: 0 引用数: 0 h-index: 0机构: Tongji Univ, Sch Phys Sci & Engn, China EU Joint Ctr Nanophonon, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R China Tongji Univ, Sch Phys Sci & Engn, China EU Joint Ctr Nanophonon, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R ChinaXu, Xiangfan论文数: 0 引用数: 0 h-index: 0机构: Tongji Univ, Sch Phys Sci & Engn, China EU Joint Ctr Nanophonon, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R China Tongji Univ, Sch Phys Sci & Engn, China EU Joint Ctr Nanophonon, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R China
- [36] ∼8 keV photoemission of the metal-insulator transition system VO2NEW JOURNAL OF PHYSICS, 2009, 11Suga, S.论文数: 0 引用数: 0 h-index: 0机构: Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, JapanSekiyama, A.论文数: 0 引用数: 0 h-index: 0机构: Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, JapanImada, S.论文数: 0 引用数: 0 h-index: 0机构: Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, JapanMiyamachi, T.论文数: 0 引用数: 0 h-index: 0机构: Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan论文数: 引用数: h-index:机构:Yamasaki, A.论文数: 0 引用数: 0 h-index: 0机构: Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, JapanYoshimura, K.论文数: 0 引用数: 0 h-index: 0机构: Kyoto Univ, Grad Sch Sci, Sakyo Ku, Kyoto 6068224, Japan Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, JapanOkada, K.论文数: 0 引用数: 0 h-index: 0机构: Okayama Univ, Grad Sch Nat Sci & Technol, Okayama 7008530, Japan Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, JapanYabashi, M.论文数: 0 引用数: 0 h-index: 0机构: RIKEN, SPring 8, Sayo, Hyogo 6798148, Japan Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, JapanTamasaku, K.论文数: 0 引用数: 0 h-index: 0机构: RIKEN, SPring 8, Sayo, Hyogo 6798148, Japan Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, JapanHigashiya, A.论文数: 0 引用数: 0 h-index: 0机构: RIKEN, SPring 8, Sayo, Hyogo 6798148, Japan Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, JapanIshikawa, T.论文数: 0 引用数: 0 h-index: 0机构: RIKEN, SPring 8, Sayo, Hyogo 6798148, Japan Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan
- [37] Microstructure scaling of metal-insulator transition properties of VO2 filmsAPPLIED PHYSICS LETTERS, 2021, 118 (12)Niang, K. M.论文数: 0 引用数: 0 h-index: 0机构: Univ Cambridge, Engn Dept, Cambridge CB3 0FA, England Univ Cambridge, Engn Dept, Cambridge CB3 0FA, EnglandBai, G.论文数: 0 引用数: 0 h-index: 0机构: Univ Cambridge, Engn Dept, Cambridge CB3 0FA, England Univ Cambridge, Engn Dept, Cambridge CB3 0FA, EnglandLu, H.论文数: 0 引用数: 0 h-index: 0机构: Univ Cambridge, Engn Dept, Cambridge CB3 0FA, England Beihang Univ, Sch Integrated Circuit Sci & Engn, Beijing 100083, Peoples R China Univ Cambridge, Engn Dept, Cambridge CB3 0FA, England论文数: 引用数: h-index:机构:
- [38] Understanding the Nature of the Kinetic Process in a VO2 Metal-Insulator TransitionPHYSICAL REVIEW LETTERS, 2010, 105 (22)Yao, Tao论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Anhui, Peoples R China Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Dept Nanomat & Nanochem, Hefei 230026, Peoples R ChinaZhang, Xiaodong论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Dept Nanomat & Nanochem, Hefei 230026, Peoples R China Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Dept Nanomat & Nanochem, Hefei 230026, Peoples R ChinaSun, Zhihu论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Anhui, Peoples R China Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Dept Nanomat & Nanochem, Hefei 230026, Peoples R ChinaLiu, Shoujie论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Anhui, Peoples R China Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Dept Nanomat & Nanochem, Hefei 230026, Peoples R ChinaHuang, Yuanyuan论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Anhui, Peoples R China Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Dept Nanomat & Nanochem, Hefei 230026, Peoples R ChinaXie, Yi论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Dept Nanomat & Nanochem, Hefei 230026, Peoples R China Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Dept Nanomat & Nanochem, Hefei 230026, Peoples R ChinaWu, Changzheng论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Dept Nanomat & Nanochem, Hefei 230026, Peoples R China Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Dept Nanomat & Nanochem, Hefei 230026, Peoples R ChinaYuan, Xun论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Dept Nanomat & Nanochem, Hefei 230026, Peoples R ChinaZhang, Wenqing论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Dept Nanomat & Nanochem, Hefei 230026, Peoples R ChinaWu, Ziyu论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Anhui, Peoples R China Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Dept Nanomat & Nanochem, Hefei 230026, Peoples R ChinaPan, Guoqiang论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Anhui, Peoples R China Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Dept Nanomat & Nanochem, Hefei 230026, Peoples R ChinaHu, Fengchun论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Anhui, Peoples R China Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Dept Nanomat & Nanochem, Hefei 230026, Peoples R ChinaWu, Lihui论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Anhui, Peoples R China Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Dept Nanomat & Nanochem, Hefei 230026, Peoples R ChinaLiu, Qinghua论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Anhui, Peoples R China Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Dept Nanomat & Nanochem, Hefei 230026, Peoples R ChinaWei, Shiqiang论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Anhui, Peoples R China Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Dept Nanomat & Nanochem, Hefei 230026, Peoples R China
- [39] Artificial afferent neurons based on the metal-insulator transition of VO2SCIENCE CHINA-INFORMATION SCIENCES, 2024, 67 (11)Chen, Jiayao论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China Zhejiang Univ, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R ChinaYin, Lei论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China Zhejiang Univ, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R ChinaWang, Yue论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China Zhejiang Univ, Inst Adv Semicond, ZJU Hangzhou Global Sci & Technol Innovat Ctr, Hangzhou 311215, Peoples R China Zhejiang Univ, ZJU Hangzhou Global Sci & Technol Innovat Ctr, Zhejiang Prov Key Lab Power Semicond Mat & Devices, Hangzhou 311215, Peoples R China Zhejiang Univ, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R ChinaWang, Haolin论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China Zhejiang Univ, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R ChinaLi, Dongke论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China Zhejiang Univ, Inst Adv Semicond, ZJU Hangzhou Global Sci & Technol Innovat Ctr, Hangzhou 311215, Peoples R China Zhejiang Univ, ZJU Hangzhou Global Sci & Technol Innovat Ctr, Zhejiang Prov Key Lab Power Semicond Mat & Devices, Hangzhou 311215, Peoples R China Zhejiang Univ, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R ChinaYang, Deren论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China Zhejiang Univ, Inst Adv Semicond, ZJU Hangzhou Global Sci & Technol Innovat Ctr, Hangzhou 311215, Peoples R China Zhejiang Univ, ZJU Hangzhou Global Sci & Technol Innovat Ctr, Zhejiang Prov Key Lab Power Semicond Mat & Devices, Hangzhou 311215, Peoples R China Zhejiang Univ, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R ChinaPi, Xiaodong论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China Zhejiang Univ, Inst Adv Semicond, ZJU Hangzhou Global Sci & Technol Innovat Ctr, Hangzhou 311215, Peoples R China Zhejiang Univ, ZJU Hangzhou Global Sci & Technol Innovat Ctr, Zhejiang Prov Key Lab Power Semicond Mat & Devices, Hangzhou 311215, Peoples R China Zhejiang Univ, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China
- [40] Magnetoresistance across metal-insulator transition in VO2 micro crystalsMATERIALS LETTERS, 2017, 196 : 248 - 251Singh, Davinder论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol Mandi, Sch Engn, Mandi 175001, Himachal Prades, India Indian Inst Technol Mandi, Sch Engn, Mandi 175001, Himachal Prades, IndiaYadav, C. S.论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol Mandi, Sch Basic Sci, Mandi 175001, Himachal Prades, India Indian Inst Technol Mandi, Sch Engn, Mandi 175001, Himachal Prades, IndiaViswanath, B.论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol Mandi, Sch Engn, Mandi 175001, Himachal Prades, India Indian Inst Technol Mandi, Sch Engn, Mandi 175001, Himachal Prades, India