Deposition and annealing of tantalum pentoxide films using 172 nm excimer lamp

被引：11

作者：

Zhang, JY ^{[1
]}

Lim, B ^{[1
]}

Boyd, IW ^{[1
]}

机构：

[1] UCL, London WC1E 7JE, England

来源：

APPLIED SURFACE SCIENCE | 2000年 / 154卷

基金：

英国工程与自然科学研究理事会;

关键词：

photo-CVD; excimer lamp; UV annealing; thin Ta(2)O(5) film; dielectric constant;

D O I：

10.1016/S0169-4332(99)00387-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report the growth of thin tantalum pentoxide films on Si(100) by photo-assisted chemical vapor deposition (photo-CVD) from a tantalum ethoxide source using an excimer lamp (Xe(2)(*), 172 nm). The effects of substrate temperature and ultraviolet (UV) annealing on the film formed have been studied using ellipsometry and Fourier transform infrared spectroscopy (FTIR) measurements. Tnt: FTIR spectra reveal suboxide formation in the as-deposited films that disappeared after subsequent UV annealing. The electrical properties of the films were determined by capacitance-voltage (C-V) and current-voltage (I-V) techniques on A1/Ta(2)O(5)/Si metal oxide semiconductor structures. The I-V characteristics of both as-deposited and annealed Alms can be described by the Fowler-Nordheim tunneling mechanism. Dielectric constant values of about 24 were readily achievable in the as-deposited films that are comparable to those obtained by other techniques. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

引用

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页码：382 / 386

页数：5

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