Combinatorial optimization of atomically controlled growth for oxide films by the carrousel type laser molecular beam epitaxy

被引:0
|
作者
Takahashi, R [1 ]
Matsumoto, Y [1 ]
Koinuma, H [1 ]
Lippmaa, M [1 ]
Kawasaki, M [1 ]
机构
[1] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
来源
COMBINATORIAL AND ARTIFICIAL INTELLIGENCE METHODS IN MATERIALS SCIENCE | 2002年 / 700卷
关键词
combinatorial laser MBE; RHEED; perovskite; crystal habit;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A new combinatorial pulsed laser deposition system has been developed for rapid optimization of epitaxial growth process by using a carrousel type masking plate. Under in-situ monitoring of growing surface with reflection high energy electron diffraction, eight films with different compositions or preparation parameters can be fabricated on a single substrate. By using this system, we have succeeded in the one lot optimization of YBa2Cu3O7-d(YBCO), PrGaO3, SrO and BaO film growths on the B-site (TiO2) terminated SrTiO3(001) substrates. Key results from these experiments include the high sensitivity of YBCO film crystallinity to the laser focusing as well as of growth behavior of epitaxial SrO and BaO films to the crystal habit with the underlying atomic layers.
引用
收藏
页码:13 / 18
页数:6
相关论文
共 50 条
  • [21] Growth of GaN and AlN thin films by laser induced molecular beam epitaxy
    Gross, M
    Henn, G
    Schroder, H
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 50 (1-3): : 16 - 19
  • [22] Effect of growth temperature on AlN films deposited by laser molecular beam epitaxy
    Zhao, Dan
    Zhu, Jun
    Li, Yanrong
    Kuei Suan Jen Hsueh Pao/Journal of the Chinese Ceramic Society, 2011, 39 (11): : 1819 - 1824
  • [23] Two-dimensional growth and structural characterization of oxide ceramic thin films grown by laser molecular beam epitaxy
    Yang, GZ
    Lu, HB
    Cui, DF
    Wang, HS
    Zhou, YL
    Chen, ZH
    THIRD INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 1998, 3175 : 342 - 346
  • [24] Dynamic layer rearrangement during growth of layered oxide films by molecular beam epitaxy
    Lee, J. H.
    Luo, G.
    Tung, I. C.
    Chang, S. H.
    Luo, Z.
    Malshe, M.
    Gadre, M.
    Bhattacharya, A.
    Nakhmanson, S. M.
    Eastman, J. A.
    Hong, H.
    Jellinek, J.
    Morgan, D.
    Fong, D. D.
    Freeland, J. W.
    NATURE MATERIALS, 2014, 13 (09) : 879 - 883
  • [25] An efficient and reliable growth method for epitaxial complex oxide films by molecular beam epitaxy
    Zhang, T. W.
    Mao, Z. W.
    Gu, Z. B.
    Nie, Y. F.
    Pan, X. Q.
    APPLIED PHYSICS LETTERS, 2017, 111 (01)
  • [26] Dynamic layer rearrangement during growth of layered oxide films by molecular beam epitaxy
    Lee J.H.
    Luo G.
    Tung I.C.
    Chang S.H.
    Luo Z.
    Malshe M.
    Gadre M.
    Bhattacharya A.
    Nakhmanson S.M.
    Eastman J.A.
    Hong H.
    Jellinek J.
    Morgan D.
    Fong D.D.
    Freeland J.W.
    Morgan, D. (ddmorgan@wisc.edu), 1600, Nature Publishing Group (13): : 879 - 883
  • [27] Molecular Beam Epitaxy Growth of Atomically Flat GaAs(111)A by As2
    Tuktamyshev, Artur
    Vichi, Stefano
    Bietti, Sergio
    Fedorov, Alexey
    Sanguinetti, Stefano
    CRYSTAL GROWTH & DESIGN, 2024, 24 (22) : 9673 - 9681
  • [28] Molecular beam epitaxy growth of iodide thin films
    Cai, Xinqiang
    Xu, Zhilin
    Ji, Shuai-Hua
    Li, Na
    Chen, Xi
    CHINESE PHYSICS B, 2021, 30 (02)
  • [29] Molecular beam epitaxy growth of iodide thin films
    蔡新强
    徐智临
    季帅华
    李娜
    陈曦
    Chinese Physics B, 2021, 30 (02) : 178 - 181
  • [30] Compact laser molecular beam epitaxy system using laser heating of substrate for oxide film growth
    Ohashi, S
    Lippmaa, M
    Nakagawa, N
    Nagasawa, H
    Koinuma, H
    Kawasaki, M
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1999, 70 (01): : 178 - 183