Semiconductor macromodeling for power electronic applications

被引:0
|
作者
Thamm, Sven [1 ]
Leone, Marco [1 ]
机构
[1] Univ Magdeburg, Inst Fundamental Elect Engn, D-39106 Magdeburg, Germany
关键词
macromodeling; power electronics; Gaussian radial basis functions; SPICE;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The macromodeling technique of electronic devices allows the reduction of the complexity of simulation models with adequate accuracy. A modeling approach suitable to describe the functional and the EMC-relevant behavior of power electronics devices is presented and tested on a diode. The static and the dynamic behavior can be modeled very exactly through the superposition of several Gaussian radial basis functions. The coupling of a transient simulation and parameter optimization allows an efficient parameterization. The resulting SPICE-compatible circuit description of the macromodel ensures the integration in different simulation environments. The suggested macromodeling technique is demonstrated for typical converter applications. Validation is carried out by comparison with reference simulations using a standard SPICE library diode model.
引用
收藏
页码:198 / +
页数:2
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