Magnetic tunnel junctions for magnetic field sensor by using CoFeB sensing layer capped with MgO film

被引：9

作者：

Takenaga, Takashi ^{[1
]}

Tsuzaki, Yosuke ^{[1
]}

Yoshida, Chikako ^{[1
]}

Yamazaki, Yuichi ^{[1
]}

Hatada, Akiyoshi ^{[1
]}

Nakabayashi, Masaaki ^{[1
]}

Iba, Yoshihisa ^{[1
]}

Takahashi, Atsushi ^{[1
]}

Noshiro, Hideyuki ^{[1
]}

Tsunoda, Koji ^{[1
]}

Aoki, Masaki ^{[1
]}

Furukawa, Taisuke ^{[1
]}

Fukumoto, Hiroshi ^{[1
]}

Sugii, Toshihiro ^{[1
]}

机构：

[1] Low Power Elect Assoc & Project LEAP, Tsukuba, Ibaraki 3058569, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 17期

关键词：

10;

D O I：

10.1063/1.4868181

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We evaluated MgO-based magnetic tunnel junctions (MTJs) for magnetic field sensors with spin-valve-type structures in the CoFeB sensing layer capped by an MgO film in order to obtain both top and bottom interfaces of MgO/CoFeB exhibiting interfacial perpendicular magnetic anisotropy (PMA). Hysteresis of the CoFeB sensing layer in these MTJs annealed at 275 degrees C was suppressed at a thickness of the sensing layer below 1.2 nm by interfacial PMA. We confirmed that the CoFeB sensing layers capped with MgO suppress the thickness dependences of both the magnetoresistance ratio and the magnetic behaviors of the CoFeB sensing layer more than that of the MTJ with a Ta capping layer. MgO-based MTJs with MgO capping layers can improve the controllability of the characteristics for magnetic field sensors. (C) 2014 AIP Publishing LLC.

引用

页数：3

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