CoFeB/MgO/CoFeB magnetic tunnel junctions prepared by layer-by-layer growth of naturally oxidized MgO

被引：1
|
作者：
Konoto, Makoto [1 ]
Murayama, Akiyuki [2 ]
Ochiai, Takao [2 ]
Amano, Minoru [2 ]
Yakushiji, Kay [1 ]
Kubota, Hitoshi [1 ]
Yuasa, Shinji [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Spintron Res Ctr, 1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan
[2] Toshiba Memory Corp, Inst Memory Technol R&D, 800 Yamanoisshiki Cho, Yokaichi, Mie 5128550, Japan
来源：
APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 10期
关键词：
ROOM-TEMPERATURE; MAGNETORESISTANCE;
D O I：
10.7567/1882-0786/ab3e55
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We fabricated CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by naturally oxidizing dc-sputtered Mg and investigated the formation process of MgO(001) by reflective high-energy diffraction. The 0.26 nm thick Mg layer on amorphous CoFe(B) had an amorphous structure in the as-deposited state and a monolayer (ML) of textured MgO(001) formed by natural oxidation. By repeating the deposition/oxidation of 0.26 nm thick Mg layers, a highly textured MgO(001) barrier layer was prepared. Surprisingly, (001)-oriented crystallization was confirmed even for 2 ML thick MgO. The MTJs prepared by layer-by-layer growth of naturally oxidized MgO exhibited high MR ratios (up to 200%) and low resistance-area products suited for device applications. (C) 2019 The Japan Society of Applied Physics
引用
收藏
页数：5
相关论文
共 50 条
  • [1] Embedded Fe Nanoparticles in the MgO Layer of CoFeB/MgO/CoFeB Perpendicular Magnetic Tunnel Junctions
    Ye, Lin-Xiu
    Lee, Ching-Ming
    Chiou, Chui-Xiang
    Chang, Yang-Hua
    Chen, Wen-Jauh
    Wu, Te-Ho
    [J]. IEEE TRANSACTIONS ON MAGNETICS, 2014, 50 (11)
  • [2] Changes in the layer roughness and crystallography during the annealing of CoFeB/MgO/CoFeB magnetic tunnel junctions
    Anderson, G.I.R.
    Wei, H.-X.
    Porter, N.A.
    Harnchana, V.
    Brown, A.P.
    Brydson, R.M.D.
    Arena, D.A.
    Dvorak, J.
    Han, X.-F.
    Marrows, C.H.
    [J]. Journal of Applied Physics, 2009, 105 (06):
  • [3] Effect of Magnetic Coupling Between Two CoFeB Layers on Thermal Stability in Perpendicular Magnetic Tunnel Junctions With MgO/CoFeB/Insertion Layer/CoFeB/MgO Free Layer
    Nishioka, K.
    Miura, S.
    Honjo, H.
    Naganuma, H.
    Nguyen, T. V. A.
    Watanabe, T.
    Ikeda, S.
    Endoh, T.
    [J]. IEEE TRANSACTIONS ON MAGNETICS, 2022, 58 (02)
  • [4] Changes in the layer roughness and crystallography during the annealing of CoFeB/MgO/CoFeB magnetic tunnel junctions
    Anderson, G. I. R.
    Wei, H. -X.
    Porter, N. A.
    Harnchana, V.
    Brown, A. P.
    Brydson, R. M. D.
    Arena, D. A.
    Dvorak, J.
    Han, X. -F.
    Marrows, C. H.
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 105 (06)
  • [5] Magnetoelectric Effect in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
    Pashen'kin, I. Yu
    Sapozhnikov, M., V
    Gusev, N. S.
    Rogov, V. V.
    Tatarskii, D. A.
    Fraerman, A. A.
    Volochaev, M. N.
    [J]. JETP LETTERS, 2020, 111 (12) : 690 - 693
  • [6] Inelastic tunneling spectroscopy of magnetic tunnel junctions based on CoFeB/MgO/CoFeB with Mg insertion layer
    Miao, Guo-Xing
    Chetry, Krishna B.
    Gupta, Arunava
    Butler, William H.
    Tsunekawa, Koji
    Djayaprawira, David
    Xiao, Gang
    [J]. JOURNAL OF APPLIED PHYSICS, 2006, 99 (08)
  • [7] High Spin Torque Efficiency of Magnetic Tunnel Junctions with MgO/CoFeB/MgO Free Layer
    Jan, Guenole
    Wang, Yu-Jen
    Moriyama, Takahiro
    Lee, Yuan-Jen
    Lin, Mark
    Zhong, Tom
    Tong, Ru-Ying
    Torng, Terry
    Wang, Po-Kang
    [J]. APPLIED PHYSICS EXPRESS, 2012, 5 (09)
  • [8] Inelastic tunneling spectroscopy of magnetic tunnel junctions based on CoFeB/MgO/CoFeB with Mg insertion layer
    Miao, Guo-Xing
    Chetry, Krishna B.
    Gupta, Arunava
    Butler, William H.
    Tsunekawa, Koji
    Djayaprawira, David
    Xiao, Gang
    [J]. Journal of Applied Physics, 2006, 99 (08):
  • [9] Conductance anomalies of CoFeB/MgO/CoFeB magnetic tunnel junctions
    Ringer, S.
    Vieth, M.
    Baer, L.
    Ruehrig, M.
    Bayreuther, G.
    [J]. PHYSICAL REVIEW B, 2014, 90 (17)
  • [10] Magnetoelectric Effect in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
    I. Yu. Pashen’kin
    M. V. Sapozhnikov
    N. S. Gusev
    V. V. Rogov
    D. A. Tatarskii
    A. A. Fraerman
    M. N. Volochaev
    [J]. JETP Letters, 2020, 111 : 690 - 693
12345