Radiation-hard ASICs for optical data transmission in the atlas pixel detector

被引：0

作者：

Ziolkowski, M ^{[1
]}

Arms, KE ^{[1
]}

Buchholz, P ^{[1
]}

Ciliox, A ^{[1
]}

Gan, KK ^{[1
]}

Holder, M ^{[1
]}

Johnson, M ^{[1
]}

Kagan, H ^{[1
]}

Kass, R ^{[1
]}

Nderitu, S ^{[1
]}

Rahimi, A ^{[1
]}

Rush, C ^{[1
]}

Smith, S ^{[1
]}

Ter-Antonian, R ^{[1
]}

Zoeller, MM ^{[1
]}

机构：

[1] Ohio State Univ, Dept Phys, Columbus, OH 43210 USA

来源：

2003 IEEE NUCLEAR SCIENCE SYMPOSIUM, CONFERENCE RECORD, VOLS 1-5 | 2004年

关键词：

D O I：

暂无

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

We have developed two radiation-hard ASICs for optical data transmission in the ATLAS pixel detector at the CERN Large Hadron Collider (LHC). The first circuit is a driver chip for a Vertical Cavity Surface Emitting Laser (VCSEL) diode to be used for 80 Mbit/s data transmission from the detector. The second circuit is a Bi-Phase Mark decoder chip to recover the control data and 40 MHz clock received optically by a PIN diode on the detector side. During ten years of operation at the LHC, the ATLAS optical link circuitry will be exposed to a maximum total fluence of 10(15) 1-MeV-equivalent neutrons per cm(2). We have successfully implemented both ASICs in a commercial 0.25 mum CMOS technology using standard layout techniques to enhance the radiation tolerance. Both chips are four-channel devices compatible with common cathode PIN and VCSEL arrays. We present results from final prototype circuits and from irradiation studies of both circuits with 24 GeV protons up to a total dose of 57 Mrad.

引用

页码：1233 / 1237

页数：5

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