Estimation of HSQ Resist Profile by Using High Contrast Developement Model for High Resolution EB Lithography

被引：1
|
作者：
Zhang, Hui [1 ]
Komori, Takuya [1 ]
Liu, Jing [1 ]
Zhang, Yulong [1 ]
Mohamad, Zulfakri [1 ]
Yin, You [1 ]
Hosaka, Sumio [1 ]
机构：
[1] Gunma Univ, Grad Sch Engn, Gunma, Japan
来源：
ADVANCED MICRO-DEVICE ENGINEERING IV | 2014年 / 596卷
关键词：
Hydrogen silsesquioxane (HSQ) resist; energy deposition distribution (EDD); exposure dosage (D); contrast; resist profile;
D O I：
10.4028/www.scientific.net/KEM.596.97
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We calculated the hydrogen silsesquioxane (HSQ) resist profiles with different contrast developers (gamma from 1.9 to 8.1) to reveal the effect of resist contrast on pattern resolution performance. Based on our home-made development modeling, the suitable energy deposition distribution (EDD) regions for various developers were determined by evaluating the quality of simulated patterns. High contrast TMAH 2.3 wt%/NaCl 4 wt% developer was demonstrated that it is suitable to form very fine dot arrays with a size of 7 nm. Low contrast developer has the limitation of forming fine pattern with sufficient height. The simulation results indicated that increasing developer contrast is benefit to improve pattern resolution.
引用
收藏
页码：97 / 100
页数：4
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