Nonlinear interaction of waves in a semiconductor layered periodic structure in electric field

被引：0
|
作者：
Bulgakov, A. A. [1 ]
Shramkova, O. V. [1 ]
机构：
[1] NASU, Inst Radiophys & Elect, Dept Solid State Radiophys, Ul Proskury 12, UA-61085 Kharkov, Ukraine
来源：
MMET 2006: 11TH INTERNATIONAL CONFERENCE ON MATHEMATICAL METHODS IN ELECTROMAGNETIC THEORY, CONFERENCE PROCEEDINGS | 2006年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Nonlinear wave interaction in infinite layered periodic semiconductors is studied. We assumed that the carriers drift parallel to the interfaces of semiconductor layers. In the linear approximation the dispersive properties and instability of electromagnetic waves and plasma polaritons are investigated. The nonlinearity under the study is due to the free carrier current. The laws of synchronism are considered. The solution of the system of simplified equations for the case of explosive instability is obtained.
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页码：475 / +
页数：2
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