HotSpot: A compact thermal modeling methodology for early-stage VLSI design

被引:723
|
作者
Huang, Wei [1 ]
Ghosh, Shougata
Velusamy, Siva
Sankaranarayanan, Karthik
Skadron, Kevin
Stan, Mircea R.
机构
[1] Univ Virginia, Charles L Brown Dept Elect & Comp Engn, Charlottesville, VA 22904 USA
[2] Univ Virginia, Dept Comp Sci, Charlottesville, VA 22904 USA
基金
美国国家科学基金会;
关键词
compact thermal model; early design stages; interconnect self-heating; temperature; VLSI;
D O I
10.1109/TVLSI.2006.876103
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This paper presents HotSpot-a modeling methodology for developing compact thermal models based on the popular stacked-layer packaging scheme, in modern very large-scale integration systems. In addition to modeling silicon and packaging layers, HotSpot includes a high-level on-chip interconnect self-heating power and thermal model such that the thermal impacts on interconnects can also be considered during early design stages. The HotSpot compact thermal modeling approach is especially well suited for preregister transfer level (RTL) and presynthesis thermal analysis and is able to provide detailed static and transient temperature information across the die and the package, as it is also computationally efficient.
引用
收藏
页码:501 / 513
页数:13
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