Charactersization of a novel GaAs-based microwave optical switch

被引：2
|
作者：
Lau, KM [1 ]
Wang, H [1 ]
Zheng, HQ [1 ]
Xiong, YZ [1 ]
Radhakrisnan, K [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
来源：
SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 10期
关键词：
GaAs; Schottky; ohmic; photodiode;
D O I：
10.1016/S0038-1101(02)00107-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The author has proposed a new device structure-GaAs-based Schottky-senticonductor-ohmic (SSO) photodiode. SSO photodiodes of various sizes, from 20 x 20 mum(2) to 200 x 200 mum(2) were fabricated. The influence of the finger width and spacing on the leakage current and turn-on voltage were studied. The SSO photodiode was observed to have distinctly higher optical sensitivity during the forward-bias compared to the PIN diode. From the present study, the author concludes that the SSO photodiode has good potential to be used as an optically controlled switch. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1573 / 1577
页数：5
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