Novel GaAs-based devices for microwave and photonic applications above 100 GHz

Recent results related to the two novel GaAs-based devices are described. First one is an InGnAs/lnP pseudomorphic HEMT which consists of Al-free material structure, From the,analysis resulting optimal device performance is demonstrated on an 0.1 pm T-gate Al-free InGaAs/lnP pHEMT with f(T)/f(max) of 160/300 GHz, Obtained cutoff frequencies are comparable to the record values reported on InGaAs/InAIAs HEMTs. however:ever Al-free devices show higher breakdown voltages. no kink effects curd better reliability. Another novel device is nn MSM detector on nonstoichiometric GaAs which is suitable for optical; heterodyne mi?ring up to THz frequency range. Intrinsic and extrinsic bandwidth of a detector are analysed and a 3-dB bandwidth of 550 GHz, higher than previously reported, is achieved on optimized device with interdigitated finger contacts. Further possibilities in performance improvement of both types of GaAs-based; devices are discussed.