Synthesis of polyaniline-type thin layer structures under low-pressure RF-plasma conditions

被引:29
|
作者
Paterno, LG
Manolache, S
Denes, F [1 ]
机构
[1] Univ Wisconsin, Ctr Plasma Aided Mfg, Madison, WI 53706 USA
[2] Univ Fed Sao Carlos, Dept Mat Engn, BR-13560 Sao Carlos, SP, Brazil
关键词
non-equilibrium plasma; electrical discharges; conjugated polymers; conducting polymers; molecular fragmentation;
D O I
10.1016/S0379-6779(02)00102-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Macromolecular thin layers were deposited under continuous and modulated aniline-RF-plasma conditions, and by Ar-, NH3, and I-2-plasmas-enhanced crosslinking of pre-deposited N-phenyl-1,4-phenylenediamine (PPD) films on optically smooth quartz substrates. Survey and high-resolution ESCA, Fourier transform infrared spectroscopy (FT-IR), UV-VIS analyses were used for the investigation of the chemical structure of the deposited films. The thermal behavior of deposited (undoped and doped) plasma-treated PPD films was characterized by TG/DTA and DSC analysis and their electrical conductivities were evaluated by using a commercial four-probe system. It was found that gas phase aniline-plasma environments induce intense molecular fragmentation processes, which result in the formation of structures that are significantly different in comparison to that of conjugated polyaniline. The plasma-mediated crosslinking approach allows the synthesis of macromolecular layers, which retain most of the structure of the starting component, and their doped versions exhibit electrical conductivities comparable to the electrical conductivities of doped conventional polyaniline. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:85 / 97
页数:13
相关论文
共 42 条
  • [31] GaN crystal growth on sapphire substrate using islandlike GaN buffer formed by repetition of thin-layer low-temperature deposition and annealing in rf-plasma molecular beam epitaxy
    Shimizu, M
    Hirata, Y
    Piao, G
    Okumura, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (12A): : L1537 - L1539
  • [32] Synthesis of carbon clusters and thin films by low temperature plasma chemical vapor deposition under atmospheric pressure
    Koinuma, H
    Horiuchi, T
    Inomata, K
    Ha, HK
    Nakajima, K
    Chaudhary, KA
    PURE AND APPLIED CHEMISTRY, 1996, 68 (05) : 1151 - 1154
  • [33] Synthesis of carbon clusters and thin films by low temperature plasma chemical vapor deposition under atmospheric pressure
    Koinuma, H.
    Horiuchi, T.
    Inomata, K.
    Ha, H.-K.
    Pure and Applied Chemistry, 68 (05):
  • [34] Nanostructures of the turbostratic BN transition layer in cubic BN thin films deposited by low-pressure inductively coupled plasma-enhanced chemical vapor deposition
    Yang, HS
    Iwamoto, C
    Yoshida, T
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (10) : 6695 - 6699
  • [35] Cubic boron nitride thin film synthesis on silica substrates by low-pressure inductively-coupled r.f. plasma chemical vapor deposition
    Chattopadhyay, KK
    Matsumoto, S
    Zhang, YF
    Sakaguchi, I
    Nishitani-Gamo, M
    Ando, T
    THIN SOLID FILMS, 1999, 354 (1-2) : 24 - 28
  • [36] Synthesis of Lithium Phosphorus Oxynitride (LiPON) Thin Films by Li3PO4 Anodic Evaporation in Nitrogen Plasma of a Low-Pressure Arc Discharge
    Gavrilov, Nikolay
    Kamenetskikh, Alexander
    Tretnikov, Petr
    Nikonov, Alexey
    Sinelnikov, Leonid
    Butakov, Denis
    Nikolkin, Viktor
    Chukin, Andrey
    MEMBRANES, 2022, 12 (01)
  • [37] HYBRID ELECTRON-CYCLOTRON RESONANCE-RF PLASMA-ETCHING OF TINX THIN-FILMS GROWN BY LOW-PRESSURE RAPID THERMAL METALORGANIC CHEMICAL VAPOR-DEPOSITION
    PEARTON, SJ
    KATZ, A
    FEINGOLD, A
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (08) : 830 - 832
  • [38] Synthesis of high fluorine content macromolecular structures under perfluoro-1-butanesulfonyl fluoride (PBSF) and PFBF/NF3-RF-plasma conditions.
    Naum, C
    Manolache, S
    Denes, F
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1999, 217 : U935 - U935
  • [39] Surface modification of thermoplastics by low-pressure microwave O2 plasma treatment for enhancement of the adhesion of the interface box/encapsulating resin and the influence on film capacitors operating under extreme humidity conditions
    Albendiz Garcia, Azahara
    Rodriguez-Castellon, Enrique
    Pelaez Millas, David
    APPLIED SURFACE SCIENCE, 2020, 513
  • [40] Mapping the growth of p-type GaN layer under Ga-rich and N-rich conditions at low to high temperatures by plasma-assisted molecular beam epitaxy
    Sadaf, Sharif Md.
    Tang, Haipeng
    APPLIED PHYSICS LETTERS, 2020, 117 (25)