Magnetic and electrical characterization of heavily boron-doped diamond

被引：3
|
作者：
Manivannan, A [1 ]
Underwood, S [1 ]
Morales, EH [1 ]
Seehra, MS [1 ]
机构：
[1] W Virginia Univ, Dept Phys, Morgantown, WV 26506 USA
来源：
MATERIALS CHARACTERIZATION | 2003年 / 51卷 / 05期
关键词：
boron-doped diamond; electrical conductivity; Curie-Weiss law;
D O I：
10.1016/j.matchar.2004.02.001
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
For a heavily boron-doped diamond (BDD) film, temperature variations of the electrical conductivity a and magnetic susceptibility chi are reported. The room temperature sigma similar or equal to 143 (Omega-cm)(-1) corresponds to a carrier concentration similar or equal to10(3) ppm, and its temperature variation yields an activation energy E-a similar or equal to 28 meV from 140 to 300 K and E-a similar or equal to 0.88 meV from 40 to 80 K. It is argued that larger boron doping leads to lower magnitudes of E-a. The gamma vs. T data (1.8-350 K) fits the Curie-Weiss law, with the concentration of paramagnetic species similar or equal to 120 ppm and a diamagnetic susceptibility similar or equal to -0.4 x 10(-6) emu/g Oe. The results obtained from the measurements of sigma and gamma are discussed and compared. (C) 2004 Elsevier Inc. All rights reserved.
引用
收藏
页码：329 / 333
页数：5
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