Back-end 3D integration of HfO2-based RRAMs for low-voltage advanced IC digital design

被引：0
|
作者：
Vianello, E. [1 ]
Thomas, O. [1 ]
Harrand, M. [1 ]
Onkaraiah, S. [1 ]
Cabout, T. [1 ]
Traore, B. [1 ]
Diokh, T. [2 ]
Oucheikh, H. [1 ]
Perniola, L. [1 ]
Molas, G. [1 ]
Blaise, P. [1 ]
Nodin, J. F. [1 ]
Jalaguier, E. [1 ]
De Salvo, B. [1 ]
机构：
[1] CEA Leti, MINATEC Campus 17 Rue Martyrs, F-38054 Grenoble 9, France
[2] STMicroElect, F-38920 Crolles, France
来源：
2013 INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT) | 2013年
关键词：
RRAM; nonvolatile memories; 3D integration; IC digital design;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper gives an overview of our research work on Oxide Resistive switching memory (OxRAM) at technology and design level. The OxRAM technology has been developed in order to be co-integrated with low-voltage advanced CMOS technologies. The device electrical characteristics show: (i) a switching time of 100ns at 1V, (ii) an excellent data retention at 150 degrees C and (iii) a high endurance up to 10(8) cycles. The second part of this paper focuses on circuit design. The benefits of 3D integration of non-volatile devices on CMOS are highlighted. Performance and area gains are discussed as well as new application features.
引用
收藏
页码：235 / 238
页数：4
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