Effect of 3 MeV electron irradiation on the photoluminescence properties of Eu-doped GaN

被引：19
|
作者：
Nakanishi, Y
Wakahara, A
Okada, H
Yoshida, A
Ohshima, T
Itoh, H
机构：
[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Tempa Ku, Toyohashi, Aichi 4418580, Japan
[2] Japan Atom Energy Res Inst, Takasaki, Gumma 3701292, Japan
来源：
APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 11期
关键词：
D O I：
10.1063/1.1504873
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of 3 MeV electron irradiation on the photoluminescence (PL) properties of Eu-doped GaN was investigated. Eu was introduced into GaN epitaxial layers grown on sapphire substrates by ion implantation. The peak concentration of implanted Eu was found to be a few atomic percent. The electron dose was in the range of 10(16)-3x10(17) cm(-2). PL was measured in the temperature range of 13-295 K by using a He-Cd laser as the excitation source. PL intensity corresponding to the transition of D-5(0)-F-7(2) in Eu3+ was hardly dependent on the electron fluence. In contrast, the PL intensity of the near-band-edge emission from undoped GaN decreased when increasing the electron fluence. (C) 2002 American Institute of Physics.
引用
收藏
页码：1943 / 1945
页数：3
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