Photoluminescence spectra of Eu-doped GaN with various Eu concentrations

被引：24

作者：

Sawahata, Junji ^{[1
]}

Seo, Jongwon ^{[1
]}

Chen, Shaoqiang ^{[1
]}

Takiguchi, Mikio ^{[1
]}

Saito, Daisuke ^{[1
]}

Nemoto, Shinya ^{[1
]}

Akimoto, Katsuhiro ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 19期

关键词：

D O I：

10.1063/1.2385214

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Variation of the luminescence spectra of Eu-doped GaN with varying Eu concentration ranging from 0.6 to 8.0 at. % was investigated. Eu-related luminescence originating from the D-5(0)-F-7(2) transition of Eu3+ was observed at about 622 nm. The luminescence basically consisted of three peaks. The relative intensity of the three peaks changed remarkably at the Eu concentration of around 2.0-3.5 at. % which corresponds to a structural phase transition from a single crystalline to a polycrystalline structure. This indicates that the incorporation site of Eu in GaN is very sensitive to the structural properties of the GaN host material.

引用

页数：3

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