Small-signal analysis of 1.3-μm microcavity light-emitting diodes

被引：2
|
作者：
Landais, P [1 ]
Roycroft, B
Shaw, A
Depreter, B
Moerman, I
Hegarty, J
机构：
[1] Univ Dublin Trinity Coll, Dept Phys, Optron Ireland, Dublin 2, Ireland
[2] State Univ Ghent, IMEC, INTEC Dept, B-9000 Ghent, Belgium
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1999年 / 11卷 / 11期
关键词：
communication systems; frequency response; light-emitting diodes; microcavity; quantum-well devices;
D O I：
10.1109/68.803039
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The modulation speed of 1.3-mu m microcavity light-emitting diodes (MCLED's) has been measured using a small-signal modulation analysis, A speed of 260 MHz using a 25-mu m diameter sample at current density of 10 kA/cm(2) has been achieved, The carrier confinement has been calculated for several carrier densities in order to investigate the origin of the speed limitation. By comparing the performance of the 1.3-mu m MCLED's with that of the 990-nm devices we conclude that the limiting factor on the speed seems to be a lack of carrier confinement in the quantum wells and not a cavity effect.
引用
收藏
页码：1342 / 1344
页数：3
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