Novel Solar Cell with MOS Diode forImprovement of Conversion Efficiency

被引：0
|
作者：
Kobayashi, T. [1 ]
Matsuo, N. [1 ]
Heya, A. [1 ]
机构：
[1] Univ Hyogo, Grad Sch Engn, Himeji, Hyogo 6712280, Japan
来源：
2013 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK2013) | 2013年
关键词：
Solar cell; MOS; Convertion efficiency;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We presented the novel structure of the solar cell that has the metal oxide semiconductor (MOS) diode at the side wall of the electricity generation layer. The purpose of this research is to simulate influence of the field-effect on the recombination of carriers and show the increase of the conversion efficiency of the solar cell. The increase ratios of the conversion efficiency under the gate voltage application are 1.62 and 1.56 times for c-Si and p-Si in comparison with non-gate application equal to the conventional structure, respectively.
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页数：2
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