Selenium Treatment on the Polycrystalline CuIn1-xGaxSe2 Thin Films Sputtered from a Quaternary Target

被引：0

作者：

Chang, Chuan ^{[1
]}

Hsu, Chia-Hao ^{[1
]}

Ho, Wei-Hao ^{[1
]}

Wei, Shih-Yuan ^{[1
]}

Su, Yue-Shun ^{[1
]}

Lai, Chih-Huang ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2013年

关键词：

anionic defect; current-blocking; current-voltage-temperature measurement; quaternary target; recombination; selenium treatment;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this work, selenium treatment at 250-350 degrees C on the polycrystalline CuIn1-xGaxSe2 (CIGS) thin films sputtered from a quaternary target has been investigated in order to passivate anionic defects which induce the current blocking behavior and lowering open circuit voltage. The CIGS thin films were selenized in a closed-space graphite container. The result of selenization was characterized by Raman spectroscopy, EQE and the current-voltage-temperature measurement. After selenization at 350 degrees C, the current-blocking behavior is inhibited and Voc increases from 310mV to 640mV. Until now, the efficiency near 9% can be obtained by an optimized selenization process.

引用

页码：362 / 364

页数：3

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