Selenium Treatment on the Polycrystalline CuIn1-xGaxSe2 Thin Films Sputtered from a Quaternary Target

被引：0
|
作者：
Chang, Chuan [1 ]
Hsu, Chia-Hao [1 ]
Ho, Wei-Hao [1 ]
Wei, Shih-Yuan [1 ]
Su, Yue-Shun [1 ]
Lai, Chih-Huang [1 ]
机构：
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
来源：
2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2013年
关键词：
anionic defect; current-blocking; current-voltage-temperature measurement; quaternary target; recombination; selenium treatment;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In this work, selenium treatment at 250-350 degrees C on the polycrystalline CuIn1-xGaxSe2 (CIGS) thin films sputtered from a quaternary target has been investigated in order to passivate anionic defects which induce the current blocking behavior and lowering open circuit voltage. The CIGS thin films were selenized in a closed-space graphite container. The result of selenization was characterized by Raman spectroscopy, EQE and the current-voltage-temperature measurement. After selenization at 350 degrees C, the current-blocking behavior is inhibited and Voc increases from 310mV to 640mV. Until now, the efficiency near 9% can be obtained by an optimized selenization process.
引用
收藏
页码：362 / 364
页数：3
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