SPACE CHARGE LIMITED CONDUCTION IN GLASSY Se100-xBix ALLOYS

被引：0

作者：

Ji, Krishna ^{[1
]}

Pal, R. K. ^{[1
]}

Agnihotri, A. K. ^{[1
]}

Shukla, R. K. ^{[2
]}

Kumar, A. ^{[2
]}

机构：

[1] BND Coll, Kanpur, Uttar Pradesh, India

[2] Harcourt Butler Technol Inst, Kanpur 208002, Uttar Pradesh, India

来源：

CHALCOGENIDE LETTERS | 2009年 / 6卷 / 02期

关键词：

Space charge limited conduction; Chalcogenide glasses; Localized states; SE THIN-FILMS; A-SI-H; AMORPHOUS SELENIUM; ELECTRICAL-PROPERTIES; LOCALIZED STATES; MIDGAP DENSITY; CRYSTALLIZATION; DEPENDENCE; IMPURITY; LASER;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The present paper reports the measurements on space charge limited conduction (SCLC) in bulk glassy Se100-xBix (x = 0.5, & 2.5,). Current-voltage (I-V) characteristics have been measured at various fixed temperatures. In all the samples, at low electric fields, ohmic behavior is observed. However, at high fields (E similar to 10(4) V/cm), non-ohmic behavior is observed. In all the samples studied, the experimental data fits well with the theory of space charge limited conduction (SCLC). From the fitting of the data to the theory of uniform distribution of traps, the density of defect states near the Fermi level is calculated.

引用

页码：77 / 81

页数：5

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