Fabrication and Characterizations of Nanorod Light Emitting Diode Arrays Using Nanosphere Lithography

被引：2

作者：

Ke, Min-Yung ^{[1
]}

Wang, Cheng-Yin ^{[1
]}

Chen, Liang-Yi ^{[1
]}

Chen, Hung-Hsien ^{[1
]}

Chiang, Hung-Li ^{[1
]}

Cheng, Yun-Wei ^{[1
]}

Hsieh, Min-Yann ^{[1
]}

Chen, Cheng-Pin ^{[1
]}

Huang, JianJang ^{[1
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 106, Taiwan

来源：

NANOSCALE ONE-DIMENSIONAL ELECTRONIC AND PHOTONIC DEVICES 3 (NODEPD 3) | 2009年 / 25卷 / 10期

关键词：

GROWTH;

D O I：

10.1149/1.3237012

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this paper, by sping-coating a mono layer of nanospheres (nanoparticles) on top of the sample, the technology of nanosphere lithography is developed and applied to GaN based LED epi-structures. By etching the p-type GaN further through the active region, p-i-n nanorods are exposed all over the mesa area. By inserting a spacer layer in between rods, nanrod LED arrays can be realized without shorting the p-type contact to n-GaN. The electrical and optical properties of the InGaN/GaN-based nano-devices are investigated at room temperatures.

引用

页码：73 / 78

页数：6

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