Rapid biaxial texture development during nucleation of MgO thin films during ion beam-assisted deposition

被引:66
|
作者
Brewer, RT [1 ]
Atwater, HA [1 ]
机构
[1] CALTECH, Thomas J Watson Lab Appl Phys, Pasadena, CA 91125 USA
关键词
D O I
10.1063/1.1476385
中图分类号
O59 [应用物理学];
学科分类号
摘要
We propose a mechanism for the nucleation of highly aligned biaxially textured MgO on amorphous Si3N4 during ion beam-assisted deposition. Using transmission electron microscopy, reflection high-energy electron diffraction, energy dispersive x-ray analysis, and ellipsometery, we have observed that highly aligned biaxially textured grains emerge from a "diffraction-amorphous" film when the film thickens from 3.5 to 4.5 nm. Transmission electron microscopy dark-field images also show the onset of rapid grain growth during this same film thickness interval. These results suggest biaxial texturing through aligned solid phase crystallization. (C) 2002 American Institute of Physics.
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页码:3388 / 3390
页数:3
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