Self-Assembled Monolayers of Cyclohexyl-Terminated Phosphonic Acids as a General Dielectric Surface for High-Performance Organic Thin-Film Transistors

被引：101

作者：

Liu, Danqing ^{[1
]}

He, Zikai ^{[1
]}

Su, Yaorong ^{[2
]}

Diao, Ying ^{[3
]}

Mannsfeld, Stefan C. B. ^{[4
]}

Bao, Zhenan ^{[3
]}

Xu, Jianbin ^{[2
]}

Miao, Qian ^{[1
,5
]}

机构：

[1] Chinese Univ Hong Kong, Dept Chem, Shatin, Hong Kong, Peoples R China

[2] Chinese Univ Hong Kong, Dept Elect Engn, Shatin, Hong Kong, Peoples R China

[3] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

[4] SLAC Natl Accelerator Lab, Menlo Pk, CA 94025 USA

[5] Chinese Univ Hong Kong, Ctr Novel Funct Mol, Shatin, Hong Kong, Peoples R China

来源：

ADVANCED MATERIALS | 2014年 / 26卷 / 42期

关键词：

self-assembled monolayers (SAMs); organic thin-film transistors; interface engineering; FIELD-EFFECT TRANSISTORS; STRUCTURAL-CHARACTERIZATION; OXIDE SURFACES; SEMICONDUCTORS; PENTACENE; ORDER; C-60; PHOSPHATIDYLCHOLINES; FABRICATION; MORPHOLOGY;

D O I：

10.1002/adma.201402822

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A novel self-assembled monolayer (SAM) on AlOy/TiOx is terminated with cyclohexyl groups, an unprecedented terminal group for all kinds of SAMs. The SAM-modified AlOy/TiOx functions as a general dielectric, enabling organic thin-film transistors with a field-effect mobility higher than 5 cm2 V-1 s-1 for both holes and electrons, good air stability with low operating voltage, and general applicability to solution-processed and vacuum-deposited n-type and p-type organic semiconductors. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：7190 / 7196

页数：7

共 50 条

[1] Self-Assembled Monolayers of Phosphonic Acids with Enhanced Surface Energy for High-Performance Solution-Processed N-Channel Organic Thin-Film Transistors
Liu, Danqing
Xu, Xiaomin
Su, Yaorong
He, Zikai
Xu, Jianbin
Miao, Qian
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2013, 52 (24) : 6222 - 6227
[2] Threshold Voltage Shifts in Organic Thin-Film Transistors Due to Self-Assembled Monolayers at the Dielectric Surface
Possanner, Stefan K.
Zojer, Karin
Pacher, Peter
Zojer, Egbert
Schuerrer, Ferdinand
ADVANCED FUNCTIONAL MATERIALS, 2009, 19 (06) : 958 - 967
[3] Self-assembled monolayers enhance the performance of oxide thin-film transistors
Cai, Wensi
Zang, Zhigang
Ding, Liming
JOURNAL OF SEMICONDUCTORS, 2021, 42 (03)
[4] Self-assembled monolayers enhance the performance of oxide thin-film transistors
Wensi Cai
Zhigang Zang
Liming Ding
Journal of Semiconductors, 2021, 42 (03) : 11 - 14
[5] n-type organic thin-film transistors with self-assembled monolayers
Kim, SH
Lee, JH
Yang, YS
Lee, JK
Zyung, T
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 42 : S551 - S554
[6] Photoactive self-assembled monolayers for optically switchable organic thin-film transistors
Salinas, Michael
Halik, Marcus
APPLIED PHYSICS LETTERS, 2013, 102 (20)
[7] Organic Thin-Film Transistors: The Passivation of the Dielectric-Pentacene Interface by Dipolar Self-Assembled Monolayers
Fletschli, Franziska D.
Suarez, Stephane
Schaer, Michel
Zuppiroli, Libero
LANGMUIR, 2010, 26 (18) : 15044 - 15049
[8] Gate Dielectric Treated by Self-Assembled Monolayers (SAMs) to Enhance the Performance of InSnZnO Thin-Film Transistors
Zhong, Wei
Zhang, Jianfeng
Liu, Yuan
Tan, Lijun
Lan, Linfeng
Deng, Sunbin
Yeung, Fion Sze Yan
Kwok, Hoi Sing
Chen, Rongsheng
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (05) : 2398 - 2403
[9] High-performance thin-film composite membranes with surface functionalization by organic phosphonic acids
Shen, Liang
Wang, Fangqian
Tian, Lian
Zhang, Xuan
Ding, Chun
Wang, Yan
JOURNAL OF MEMBRANE SCIENCE, 2018, 563 : 284 - 297
[10] InGaZnO thin-film transistors with back channel modification by organic self-assembled monolayers
Xiao, Peng
Lan, Linfeng
Dong, Ting
Lin, Zhenguo
Shi, Wen
Yao, Rihui
Zhu, Xuhui
Peng, Junbiao
APPLIED PHYSICS LETTERS, 2014, 104 (05)

← 1 2 3 4 5 →