InGaZnO thin-film transistors with back channel modification by organic self-assembled monolayers

被引：38
|
作者：
Xiao, Peng [1 ]
Lan, Linfeng [1 ]
Dong, Ting [1 ]
Lin, Zhenguo [1 ]
Shi, Wen [1 ]
Yao, Rihui [1 ]
Zhu, Xuhui [1 ]
Peng, Junbiao [1 ]
机构：
[1] S China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 05期
基金：
中国国家自然科学基金;
关键词：
FIELD-EFFECT TRANSISTORS; AMBIENT ATMOSPHERE; GATE DIELECTRICS; OXIDE; LAYER; ZNO; INSULATOR;
D O I：
10.1063/1.4864313
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
InGaZnO (IGZO) thin-film transistors (TFTs) with back channel modified by different kinds of self-assembled monolayers (SAMs) were fabricated. The mobility and electrical stability of the IGZO-TFTs were greatly improved after SAM-modification, owing to the good interface coupling and less water adsorption-desorption effect on the IGZO surface. Meanwhile, the octadecyltriethoxysilane (OTES) treated IGZO-TFT exhibited a higher mobility of 26.6 cm(2) V-1 s(-1) and better electrical stability compared to the octadecanethiol (ODT) treated one, which was attributed to the formation of a more compact and steady SAM on the IGZO surface after OTES treatment. (C) 2014 AIP Publishing LLC.
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页数：4
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