A DC-contact MEMS shunt switch

被引：35

作者：

Tan, GL ^{[1
]}

Rebeiz, GM ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Radiat Lab, Ann Arbor, MI 48109 USA

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2002年 / 12卷 / 06期

关键词：

micromachining; radars; RF MEMS; switches; telecommunications;

D O I：

10.1109/LMWC.2002.1009998

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the design, fabrication, and performance of a metal-to-metal contact micro-electro-mechanical (MEMS) shunt switch. The switch is composed of a fixed-fixed metal beam with two pull-down electrodes and a central dc-contact area. The switch is placed in an in-line configuration in a coplanar waveguide transmission line. This topology results in a compact dc-contact shunt switch and high isolation at 0.1-18 GHz. The isolation at mm-wave frequencies is limited by the inductance to ground and is -20 dB at 18 GHz. The application areas are in wireless communications and high-isolation switching networks for satellite systems.

引用

页码：212 / 214

页数：3

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