Design of DC-contact RF MEMS switch with temperature stability

In order to improve the temperature stability of DC-contact RF MEMS switch, a thermal buckle-beam structure is implemented. The stability of the switch pull-in voltage versus temperature is not only improved, but also the impact of stress and stress gradient on the drive voltage is suppressed. Test results show that the switch pull-in voltage is less sensitive to temperature between -20 degrees C and 100 degrees C. The variable rate of pull-in voltage to temperature is about -120 mV/degrees C. The RF performance of the switch is stable, and the isolation is almost independent of temperature. After being annealed at 280 degrees C for 12 hours, our switch samples, which are suitable for packaging, have less than 1.5% change in the rate of pull-in voltage. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.