Impact of band structure on charge trapping in thin SiO2/Al2O3/poly-Si gate stacks

被引：5

作者：

Pantisano, L ^{[1
]}

Lucci, L

Cartier, E

Kerber, A

Groeseneken, G

Green, M

Selmi, L

机构：

[1] IMEC, Louvain, Belgium

[2] Univ Udine, I-33100 Udine, Italy

[3] IBM Corp, Thomas J Watson Res Ctr, IBM Semicond Res & Dev Ctr, Res Div, Yorktown Hts, NY 10598 USA

[4] Katholieke Univ Leuven, Louvain, Belgium

[5] Agere Syst, Murray Hill, NJ 07974 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 05期

关键词：

charge trapping; high-kappa; poly-Si;

D O I：

10.1109/LED.2004.826534

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electron and hole trapping were studied in sub-2-nm SiO2/Al2O3/poly-Si gate stacks. It was found that during substrate injection, electron trapping is the dominant mechanism. Conversely, during gate injection both hole and electron trapping can be observed, depending on the applied bias. These hot carrier effects are closely linked to the band structure Of SiO2 /Al2O3 poly-Si system.

引用

页码：320 / 322

页数：3

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