Increasing Saturated Electron-Drift Velocity in Donor-Acceptor Doped pHEMT Heterostructures

被引：5

作者：

Protasov, D. Yu. ^{[1
,2
]}

Gulyaev, D. V. ^{[1
]}

Bakarov, A. K. ^{[1
]}

Toropov, A. I. ^{[1
]}

Erofeev, E. V. ^{[3
]}

Zhuravlev, K. S. ^{[1
,4
]}

机构：

[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

[2] Novosibirsk State Tech Univ, Novosibirsk 630073, Russia

[3] Tomsk State Univ Control Syst & Radioelect, Tomsk 634050, Russia

[4] Novosibirsk State Univ, Novosibirsk 630090, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2018年 / 44卷 / 03期

关键词：

D O I：

10.1134/S1063785018030240

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Field dependences of the electron-drift velocity in typical pseudomorphic high-electron-mobility transistor (pHEMT) heteroepitaxial structures (HESs) and in those with donor-acceptor doped (DApHEMT) heterostructures with quantum-well (QW) depth increased by 0.8-0.9 eV with the aid of acceptor layers have been studied by a pulsed technique. It is established that the saturated electron-drift velocity in DA-pHEMT-HESs is 1.2-1.3 times greater than that in the usual pHEMT-HESs. The electroluminescence (EL) spectra of DA-pHEMT-HESs do not contain emission bands related to the recombination in widebandgap layers (QW barriers). The EL intensity in these HESs is not saturated with increasing electric field. This is indicative of a suppressed real-space transfer of hot electrons from QW to barrier layers, which accounts for the observed increase in the saturated electron-drift velocity.

引用

页码：260 / 262

页数：3

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