Spatially resolved low-frequency noise measured by atomic force microscopy

被引：7
|
作者：
Cockins, Lynda [1 ]
Miyahara, Yoichi [1 ]
Grutter, Peter [1 ]
机构：
[1] McGill Univ, Dept Phys, Montreal, PQ H3A 2T8, Canada
来源：
PHYSICAL REVIEW B | 2009年 / 79卷 / 12期
基金：
加拿大自然科学与工程研究理事会;
关键词：
atomic force microscopy; III-V semiconductors; indium compounds; localised states; random noise; semiconductor heterojunctions; semiconductor quantum dots; two-dimensional electron gas; SCANNING-TUNNELING-MICROSCOPY; QUANTUM-DOT; SPECTROSCOPY; CHARGES; SURFACE; PROBE;
D O I：
10.1103/PhysRevB.79.121309
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report spatially resolved charge noise measurements on semiconductor samples by atomic force microscopy. We observed charge noise induced by light illumination on an InP/InGaAs heterostructure with surface InAs quantum dots and a buried two-dimensional electron gas. The observed noise exhibits generation-recombination noise or random telegraph noise depending on light intensity and bias voltage. A spatial resolution better than 20 nm was demonstrated by comparing the noise on and off the InAs quantum dots. The approach enables the localization of individual traps and will aid in understanding noise mechanisms.
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页数：4
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